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| CYStech Electronics Corp. High Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 1/4 BTC3838N3 Features * High transition frequency, fT=3.2GHz(typ.) * Low output capacitance, Cob=0.8pF(typ.) Applications * UHF converter. * Local oscillator Symbol BTC3838N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 20 11 5 50 200 150 -55~+150 Unit V V V mA mW C C BTC3838N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 20 11 3 56 1.4 Typ. 3.2 0.8 Max. 500 500 0.5 270 1.5 Unit V V V nA nA V GHz pF Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 2/4 Test Conditions IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=10V, IE=0 VEB=2V, IC=0 IC=10mA, IB=5mA VCE=10V, IC=5mA VCE=10V, IC=10mA, f=500MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range N 56~120 P 82~180 Q 120~270 BTC3838N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE=10V Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT) Current Gain---HFE 100 100 IC=10IB IC=2IB 10 0.1 1 10 Collector Current---IC(mA) 100 10 0.1 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 10000 Cutoff Frequency---fT(MHz) 100 1000 1000 100 0.1 1 10 Collector Current---IC(mA) 100 0.1 1 10 Collector Current---IC(mA) 100 Output Capacitance vs Reverse Biased Voltage 10 Output Capacitance---Cob(pF) Power Dissipation---PD(mW) 250 200 150 100 50 0 0.1 1 10 100 0 Power Derating Curve 1 0.1 Reverse Biased Voltage---VCB(V) 50 100 150 200 Ambient Temperature---TA() BTC3838N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Marking: L 3 B 1 2 S Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 4/4 A 1D V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector D H K J C *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC3838N3 CYStek Product Specification |
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